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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector Current -IC= 12A *High DC Current Gain-hFE= 1000(Min)@ IC= 5A *Complement to Type BDX64/A/B/C APPLICATIONS *Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BDX65 Collector-Base Voltage BDX65A BDX65B BDX65C BDX65 Collector-Emitter Voltage BDX65A BDX65B BDX65C VEBO IC ICM IB B BDX65/A/B/C VALUE 80 100 UNIT VCBO V 120 140 60 80 V 100 120 5 12 16 0.2 117 200 -65~200 V A A A W VCEO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER BDX65 BDX65A IC= 100mA ;IB=0 BDX65B BDX65C VCE(sat) VBE(on) VECF ICEO ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-Emitter Saturation Voltage Base-Emitter On Voltage C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance IC= 5A; IB= 20mA B BDX65/A/B/C CONDITIONS MIN 60 80 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 100 120 2 2.5 1.2 0.2 0.4 3 5 3300 1000 3700 200 pF V V V mA mA mA IC= 5A ; VCE= 3V IF= 5A VCE= 1/2VCEOmax; IB= 0 VCB= VCEOmax;IE= 0 VCB= 1/2VCBOmax;IE= 0;TJ= 200 VEB= 5V; IC=0 IC= 1A ; VCE= 3V IC= 5A ; VCE= 3V IC= 12A ; VCE= 3V IE= 0 ; VCB= 10V; ftest= 1MHz Switching times ton toff Turn-on Time IC= 5A; IB1= -IB2= 20mA Turn-off Time 6 s 1 s isc Websitewww.iscsemi.cn 2 |
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